Photoresist removal

Details Photoresist removal Photoresist removal

G - Physics

03

C

G03C 5/00 (2006.01) B08B 3/00 (2006.01)

Patent

CA 2550522

Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

L'invention concerne une composition et un procédé pour le traitement de semi-conducteurs. Un mode de réalisation décrit une composition nettoyante liquide pour l'élimination de la photorésine. Cette composition comprend une base forte ; un oxydant ; et un solvant polaire. Un mode de réalisation décrit un procédé d'élimination de la photorésine. Ce procédé consiste à appliquer une composition nettoyante liquide contenant entre environ 0,1 et environ 30 % en poids d'une base forte, entre environ 1 et environ 30 % en poids d'un oxydant, entre environ 20 et environ 95% en poids d'un solvant polaire, et à éliminer la photorésine.

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