G - Physics – 03 – F
Patent
G - Physics
03
F
96/177, 117/81
G03F 7/028 (2006.01) C23C 16/02 (2006.01) G03F 7/027 (2006.01) G03F 7/038 (2006.01) G03F 7/039 (2006.01) G03F 7/16 (2006.01) H01C 17/08 (2006.01) H01C 17/24 (2006.01)
Patent
CA 2019666
ABSTRACT PHOTORESISTS FORMED BY POLYMERISATION OF DI-UNSATURATED MONOMERS A photoresist coating for use in microlithography comprises a polymer of a monomer of the formula Image V wherein X and Y are strong electron withdrawing groups and R4 is H or, providing that X and Y are both -CN, R4 may be aliphatic hydrocarbyl, aryl or alkaryl. Preferred monomers are of the formula Image Va wherein R7 is a C1-C5 alkyl or C2-C5 alkenyl group, more particularly ethyl 2-cyanopenta-2,4-dienoate or allyl 2-cyanopenta-2,4- dienoate. Methods for applying a resist coating by vapour deposition of these monomers and exposure to radiation are described. A positive or negative tone image can be produced, depending upon the imaging method employed. - 17 -
Coakley Pauline
Guthrie John
Woods John
Kirby Eades Gale Baker
Loctite (ireland) Limited
LandOfFree
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