Photoresponsive semiconductor device having a double layer...

Details Photoresponsive semiconductor device having a double layer... Photoresponsive semiconductor device having a double layer...

H - Electricity

01

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345/23

H01L 31/02 (2006.01) H01L 31/0216 (2006.01) H01L 31/06 (2006.01) H01L 31/075 (2006.01)

Patent

CA 1219664

ABSTRACT An improved dual layer anti-reflective coating for use in a photoresponsive semiconductor device is disclosed. The coating has a low parasitic absorbance in the range of about 475 to 600 nanometers. The dual layer has an incident light layer and an intermediate layer. The light incident layer may be a transparent conductive oxide. The intermediate layer is formed of a silicon alloy including at least one band gap energy widening element and may be the outermost layer of the device. The intermediate layer has an index of refraction between the indexes of refraction of the incident light layer and the underlying photoresponsive semiconductor device. The relative thicknesses of the incident light layer and intermediate layer are chosen to maximize the amount of light transmitted to the photoresponsive device.

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