H - Electricity – 01 – J
Patent
H - Electricity
01
J
345/27
H01J 31/00 (2006.01) H01L 27/146 (2006.01) H01L 31/103 (2006.01) H01L 31/108 (2006.01)
Patent
CA 1269164
ABSTRACT A photosensitive diode element and method of manufacture. The diode element is comprised of a first layer of n-type hydrogenated amorphous-silicon forming a cathode, and a second layer of p+ type material forming an anode, the second layer overlying the first layer and being transparent to optical energy. As a result of using hydrogenated amorphous-silicon, the photosensitive diode element according to the present invention has characteristics of high photoconductivity, controllably variable optical gap, and thin film structure. A photosensitive diode array formed from the subject diode elements is easily fabricated, employs straightforward circuitry for addressing each diode element, and is characterized by low crosstalk between elements, maximized optical sensitivity and broad dynamic range.
504872
Shapiro Cohen
Zarlink Semiconductor Inc.
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