Phototonic device with strain-induced three dimensional...

Details Phototonic device with strain-induced three dimensional... Phototonic device with strain-induced three dimensional...

H - Electricity

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H01L 31/00 (2006.01) C30B 23/02 (2006.01) C30B 25/02 (2006.01) H01L 31/0352 (2006.01)

Patent

CA 2271369

In order to fabricate a photonic device with an enhanced photoresponse at 155 nm, a plurality of undulating quantum well layers are grown on said substrate in a three dimensional growth mode to defeat the limitations imposed by strain on the maximum layer thickness. The quantum wells typically are formed by epitaxially growing alternating layers of Si1-xGeX and Si on a silicon substrate.

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