Photovoltage detector

G - Physics – 01 – J

Patent

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G01J 1/42 (2006.01)

Patent

CA 2579585

A method and system for detecting and monitoring a temporal and spatial distribution of a light beam are provided. A semiconductor substrate (120) having a given doping concentration range is partially exposed to an incident laser beam (150). Each part of the semiconductor structure (120) which is exposed to the laser beam is provided with an electrical contact.(145), which outputs a voltage which is directly related to the optical power or energy incident on the exposed area. The thermo-voltage is produced by the laser induced thermal gradients. The sensitivity and inter-pixel cross-talk is determined by pixel pitch, doping concentration and window opening (110). Depending of the design, each pixel might be sensitive to the temporal variation of the laser beam.

L'invention porte sur un procédé et sur un système de détection et suivi de la distribution temporelle et spatiale d'un faisceau lumineux. A cet effet un substrat semi-conducteur (120) présentant une certaine plage de concentration de dopants est partiellement exposé à un faisceau laser incident (150). Chaque partie de la structure du semi-conducteur (120) exposée au rayon laser présente un contact électrique (145) produisant une tension en relation directe avec la puissance optique ou l'énergie frappant la zone exposée. La thermotension résulte des gradients thermiques produits par le laser. La sensibilité et la diaphonie entre pixels est déterminée par la hauteur du pixel, la concentration en dopant et l'ouverture de la fenêtre (110). En fonction du concept, chaque pixel peut être sensible aux variations temporelles du faisceau laser.

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