H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/23, 117/57,
H01L 31/18 (2006.01)
Patent
CA 1060281
ABSTRACT OF THE DISCLOSURE A method of making low cost photovoltaic cells on a large scale basis by means of a continuous process of coat- ing sheet glass while the sheet glass moves in and has its under surface immersed in a tank of molten material, comprising forming the film of CdS microcrystals on the glass sheet, which has previously been coated with transparent SnOx to a thickness of about 3 to 6 microns, the method including inter- mittently and slowly spraying on said glass, while its exposed surface is maintained at a constant temperature in the range 500°F to 800°F, and while irradiating the sheet with intense ultraviolet light, a water solution of CdCl2 and of thiourea and of AlCl3, so as to form a film of CdS microcrystals heavily impregnated with Al at least adjacent to the SnOx, but only optionally the exposed surface of the CdS, thereafter raising the temperature of the sheet of glass to 500°C-550°C, 525°C being optimum to avoid interaction of the CdS and the SnOx which can occur at higher temperatures or even at 525°C if too long continued, thereafter cooling the glass to approximately room temperature, thereafter coating the glass with Cu2S, the 2 of Cu2S being as nearly as possible precise, by dipping the sheet coated with CdS in a solvent which may be water, the solu- tion inlcuding a weak acid, such as tartaric acid, citric acid or lactic acid, a quantity of CuCl, and optionally a quantity of H4Ce(SO4)4 and NaCl, or some other alkaline chloride, or by electroplating to form a film of Cu2S. The Cu2S forming process proceeds by ion interchange, i.e., S from CdS combines with Cu to form Cu2S. Cu is then applied over the Cu2S, and the cell cured at about 400°F to 500°F.
235472
Jordan John F.
Lampkin Curtis M.
LandOfFree
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