Photovoltaic cell with shallow emitter

H - Electricity – 01 – L

Patent

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Details

H01L 31/072 (2006.01) H01L 31/0216 (2006.01) H01L 31/0224 (2006.01) H01L 31/0256 (2006.01)

Patent

CA 2683524

A phototovoltaic semiconductor apparatus for use in forming a solar cell with shallow emitter is disclosed The apparatus includes first and second adjacent oppositely doped volumes of semiconductor material forming a semiconductor heteroj unction The apparatus also includes a first passivation layer of material on the front side, the first passivation layer having a first outer surface and a plurality of openings therethrough defining corresponding unpassivated areas of the front side that are unpassivated by the first passivation layer The apparatus further includes a first conductive anti-reflective coactmg on the first outer surface of the passivation layer and on the corresponding unpassivated areas of the front side The apparatus may further include dielectric antireflective coating on an outer surface of the first passivation layer.

La présente invention concerne un appareil semiconducteur photovoltaïque à utiliser dans la formation d'une cellule solaire à émetteur peu profond. L'appareil comprend un premier et un second volume dopés adjacents et à l'opposé l'un de l'autre de matériau semiconducteur y formant une jonction de semi-conducteur. L'appareil comprend aussi une première couche de passivation de matériel du côté avant, la première couche de passivation ayant une premier surface externe et une pluralité d'ouvertures la traversant et définissant des zones non passivées à l'avant qui sont non passivées par la première couche de passivation. L'appareil comprend aussi un premier revêtement antiréfléchissant conducteur sur la première surface externe de la couche de passivation et sur les zones non passivées correspondantes du côté avant. L'appareil peut en outre comprendre un revêtement diélectrique antiréfléchissant sur une surface externe de la première couche de passivation.

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