Photovoltaic cells

H - Electricity – 01 – L

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345/22

H01L 31/02 (2006.01) H01L 31/04 (2006.01) H01L 31/072 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1168741

ABSTRACT OF THE DISCLOSURE: A photovoltaic cell comprising a region of n-type semiconductor material in intimate contact with a region of p-type semiconductor material, in which both regions are in contact with conducting electrodes. The n-type and p-type semiconductor materials have lattice parameters which differ from each other by a percentage equal or greater than 5%. The n-type semiconductor material is constituted by high conducti- vity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.

359963

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