H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/22
H01L 31/02 (2006.01) H01L 31/04 (2006.01) H01L 31/072 (2006.01) H01L 31/18 (2006.01)
Patent
CA 1168741
ABSTRACT OF THE DISCLOSURE: A photovoltaic cell comprising a region of n-type semiconductor material in intimate contact with a region of p-type semiconductor material, in which both regions are in contact with conducting electrodes. The n-type and p-type semiconductor materials have lattice parameters which differ from each other by a percentage equal or greater than 5%. The n-type semiconductor material is constituted by high conducti- vity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.
359963
Alessandrini Paolo
de Angelis Lucio
Galluzzi Fabrizio
Losciale Francesco
Scafe Ernesto
E.n.i. Ente Nazionale Idrocarburi
Robic Robic & Associes/associates
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