Photovoltaic element and method for producing the same

Details Photovoltaic element and method for producing the same Photovoltaic element and method for producing the same

H - Electricity

01

L

H01L 31/04 (2006.01) H01L 31/02 (2006.01) H01L 31/0224 (2006.01) H01L 31/075 (2006.01)

Patent

CA 2161932

A photovoltaic element having a high release voltage is provided by inhibiting the injection of carrier to p-type semiconductor located at the upmost surface of the generation layer from the upper electrode. The photovoltaic element according to the present invention, in which an n-type semiconductor which is supposed to be represented by "n", an i-type semiconductor which is supposed to be represented by "i", and p-type semiconductor which is supposed to be represented by "p", are laminated in this order on to a substrate to form a structure comprising a nip junction, and a generation layer containing at least one of the structure is provided; that the upper electrode is placed on the p-layer located at the upmost surface of the generation layer to form the photovoltaic element, is characteristic in that the p- layer positioned at the upmost surface of the generation layer is composed of a first p-layer containing crystal that is connected with the i-layer and a second p-layer comprising amorphous that is connected with the upper electrode.

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