Photovoltaic element with a semiconductor layer comprising...

Details Photovoltaic element with a semiconductor layer comprising... Photovoltaic element with a semiconductor layer comprising...

H - Electricity

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H01L 31/06 (2006.01) H01L 21/363 (2006.01) H01L 21/365 (2006.01) H01L 31/02 (2006.01) H01L 31/0296 (2006.01) H01L 31/068 (2006.01) H01L 31/072 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1303194

ABSTRACT OF THE DISCLOSURE A photovoltaic element which generates photoelectro- motive force by the connection of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic% of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol% per unit volume.

572580

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