Photovoltaic system having rectifying interface and isotype

Details Photovoltaic system having rectifying interface and isotype Photovoltaic system having rectifying interface and isotype

H - Electricity

01

M

345/22

H01M 6/30 (2006.01) H01G 9/20 (2006.01) H01L 31/072 (2006.01) H01M 6/36 (2006.01)

Patent

CA 1103341

Abstract of the Disclosure The voltage produced by a photovoltaic device con- taining a semiconductor layer is enhanced by forming a junction between the semiconductor material of the device and an additional semiconductor material to form an isotype heterodiode. For example, the solar power conversion efficiency and the voltage produced by an n-CdS layer immersed in an electrolyte is enhanced by forming a junction between the n-CdS layer and an n-GaAs layer, the junction being on that face of the n-CdS layer which is opposite to the face exposed to the electrolyte.

300808

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