Piezoelectric semiconductor and process for production thereof

H - Electricity – 01 – L

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H01L 41/18 (2006.01) C30B 7/00 (2006.01) C30B 7/10 (2006.01) C30B 29/22 (2006.01) H01L 41/22 (2006.01) H03H 3/04 (2006.01) H03H 9/02 (2006.01)

Patent

CA 2105258

A piezoelectric semiconductor is a single crystal composed mainly of ZnO having properties such as electrical conductivity of 10-11 ~ 10-3 1/.OMEGA.~ cm suitable for use as an acoustoelectric element, by adding a given amount of H2O2 to the alkali solvent, or by using NH4OH in the alkali solvent, or by doping the ZnO single crystal with Li or a trivalent metal. The piezoelectric semiconductor can be suitably used as a ultrasonic transducer material of acoustoelectric type and can also be used as a material for ultrasonic amplification, an surface acoustic wave filter, a piezoelectric transducer, a fluorescent material for emitting a low-velocity electron beam, etc.

Semiconducteur piézoélectrique consistant en un unique cristal essentiellement de ZnO ayant des propriétés telles qu'une conductivité électrique de 10-11 ~ 10-3 1/OMEGA.~ cm. On peut l'utiliser comme élément acoustoélectrique en ajoutant au solvant alcalin une certaine quantité de H2O2 ou de NH4OH, ou en dopant l'unique cristal de ZnO au Li ou autre métal trivalent. On peut aussi l'utiliser comme matériau de transducteur ultrasonique de type acoustoélectrique ou comme matériau d'amplification ultrasonique, filtre d'ondes acoustiques de surface, transducteur piézoélectrique, matériau fluorescent émetteur d'un faisceau d'électrons à faible vitesse, etc.

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