Piezoresistive pressure transducer

Details Piezoresistive pressure transducer Piezoresistive pressure transducer

G - Physics

01

L

G01L 7/08 (2006.01) G01L 9/00 (2006.01) G01L 9/06 (2006.01)

Patent

CA 2082419

2082419 9117418 PCTABS00008 A piezoresistive pressure transducer (80) employing a sapphire force collector diaphragm (1) having piezoresistive films of silicon epitaxially formed on a major surface thereof, preferably in a Wheatstone bridge pattern. The piezoresistive elements (7, 22) of the Wheatstone bridge are oriented so that the pressure sensitivity is maximized, while the linearity errors of the output voltage of the bridge in relationship to the applied pressure are minimized. The silicon film is preferably of a thickness of from 1000 to 60,000 angströms and is doped with boron in the range of from 5x1017 to 9x1020 atoms/cc. Electrical arms (24) and contact pads (19) are also formed on the major surface of the diaphragm. The diaphragm (1) is mounted on a ceramic body (3) having a cavity (15) in the upper surface thereof, the diaphragm (1) enclosing the cavity (15) to form a protective chamber with the films within the chamber. The diaphragm is hermetically bonded by the ceramic glass to the body (3). The contact pads (19) are positioned over a matching number of feed through tubes in the ceramic body. A protective assembly encloses the pressure transducer (80).

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