H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/22, 356/56
H01L 31/04 (2006.01) H01L 31/0392 (2006.01) H01L 31/075 (2006.01) H01L 31/20 (2006.01)
Patent
CA 1170786
ABSTRACT OF THE DISCLOSURE An amorphous silicon PIN semi-conductor device is manufactured by (i) providing a substrate (10) with a layer (11) of an electroconductive material, for example molybdnum, which forms an ohmic contact with N+ amorphous silicon; (ii) sequentially sputtering a layer of N+ doped amorphous silicon (12), a layer of intrinsic, I, amorphous silicon (14) and a layer of P+ doped amorphous silicon (16). A layer (18) of an electroconductive material, for example semi-transparent indium tin oxide, is sputtered onto layer (16) to form an ohmic contact there- with. A grid current-collection electrode (20) is optimally patterned on layer (18). The sputtering step parameters are controlled, and the steps can be per- formed in a single vacuum system and vacuum pump-down procedure. The semi-transparent layer (18) can thus be depointed on a thin P+ doped layer (16) without deteriora- tion of the junction forming characteristics of the underlying amorphous silicon layers.
389475
Friedman Robert A.
Moustakas Theodore D.
Borden Ladner Gervais Llp
Exxon Research And Engineering Company
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