Pin diode switched rf signal attenuator

Details Pin diode switched rf signal attenuator Pin diode switched rf signal attenuator

H - Electricity

03

H

333/85, 333/86

H03H 7/25 (2006.01)

Patent

CA 1250352

Abstract A multi-path, ladder-type variable step RF signal attenuator is provided. The ladder network is comprised of a number of asymmetric power splitting elements and PI-pad resistor attenuator elements. The high-speed switching and long life characteristics of PIN diodes are utilized to switch resistive attenuator elements into or out of the ladder network to provide selectable values of signal attenuation.

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