H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/23
H01L 31/06 (2006.01) H01L 21/363 (2006.01) H01L 21/365 (2006.01) H01L 31/02 (2006.01) H01L 31/0296 (2006.01) H01L 31/075 (2006.01) H01L 31/18 (2006.01)
Patent
CA 1311547
ABSTRACT OF THE DISCLOSURE An improved pin junction photovoltaic element which generates photoelectromotive force by the junction of a p- type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe1-xTex:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7 The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short- wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not exhibit any undesirable light-induced fatigue even upon continuous use for a long period of time.
575959
Arao Kozo
Fujioka Yasushi
Ishihara Shunichi
Kanai Masahiro
Murakami Tsutomu
Canon Kabushiki Kaisha
Ridout & Maybee Llp
LandOfFree
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