Pin photodetector

Details Pin photodetector Pin photodetector

H - Electricity

01

L

H01L 31/00 (2006.01) H01L 27/14 (2006.01) H01L 31/062 (2006.01) H01L 31/113 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2528216

A PIN photodetector includes a first semiconductor contact layer, a semiconductor absorption layer having a larger area than the first semiconductor contact layer, a semiconductor passivation layer positioned between the first semiconductor contact layer and absorption layer, and a second semiconductor contact layer. The semiconductor absorption layer and passivation layers are positioned between the first and second semiconductor contact layers.

L'invention porte sur un photodétecteur de PIN comprenant: une première couche de contact semi-conductrice; une couche d'absorption semi-conductrice d'une surface supérieure à celle de la première couche de contact semi-conductrice; une couche de passivation semi-conductrice placée entre la première couche de contact semi-conductrice et la couche d'absorption; et une deuxième couche de contact semi-conductrice. Les couches semi-conductrices d'absorption et de passivation sont placées entre la première et la deuxième couche de contact semi-conductrices.

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