Planar deep oxide isolation process

Details Planar deep oxide isolation process Planar deep oxide isolation process

H - Electricity

01

L

356/141

H01L 21/26 (2006.01) H01L 21/312 (2006.01) H01L 21/316 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1142272

A PLANAR DEEP OXIDE ISOLATION PROCESS ABSTRACT OF THE DISCLOSURE A planar deep oxide isolation process for providing deep wide silicon dioxide filled trenches in a planar surface of a silicon semiconductor substrate is described. The process comprises the steps of form- ing deep wide trenches in a planar surface of the silicon substrate; forming a thin layer of silicon dioxide on the planar surface of the silicon substrate and the exposed silicon surfaces of the deep wide trenches; applying resin glass (polysiloxane) to the planar surface of the semiconductor substrate and within the deep wide trenches; spinning off at least a portion of the resin glass on the planar surface of the substrate; baking the substrate at a low tempera- ture; exposing the resin glass contained within the deep wide trenches of the substrate to the energy of an E-beam; developing the resin glass contained on said substrate in a solvent; heating the substrate in oxygen to convert the resin glass contained within the deep wide trenches to silicon dioxide; depositing a layer of silicon dioxide to provide a planar silicon dioxide surface on the exposed surface of the substrate; and planarize exposed silicon dioxide surface to sili- con of substrate. FI9-79-011

356128

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