Planar structure for high voltage semiconductor devices with...

Details Planar structure for high voltage semiconductor devices with... Planar structure for high voltage semiconductor devices with...

H - Electricity

01

L

356/53

H01L 29/06 (2006.01) H01L 23/31 (2006.01) H01L 23/58 (2006.01) H01L 29/34 (2006.01) H01L 29/739 (2006.01) H01L 29/747 (2006.01) H01L 29/78 (2006.01) H01L 29/08 (2006.01)

Patent

CA 1175953

IR-699 PLANAR STRUCTURE FOR HIGH VOLTAGE SEMICONDUCTOR DEVICES WITH GAPS IN GLASSY LAYER OVER HIGH FIELD REGIONS ABSTRACT OF THE DISCLOSURE Two gaps are placed in the reflowed phosphorus- doped silicon-dioxide material overcoating of a planar high voltage semiconductor device to prevent polarization of the reflowed silox. The invention is applicable to any device using a polarizable glassy coating which will be exposed to a high electric field extending along its surface and is shown applied to a high voltage diode, a high voltage MOSFET and a high voltage TRIMOS-type device which is a semiconductor switching device using spaced MOS transistors having a common drain region.

389424

Affiliated with

Also associated with

Rating

Planar structure for high voltage semiconductor devices with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Planar structure for high voltage semiconductor devices with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planar structure for high voltage semiconductor devices with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1322091