Planar transmission line attenuator and switch

Details Planar transmission line attenuator and switch Planar transmission line attenuator and switch

H - Electricity

01

P

356/153, 333/85

H01P 1/22 (2006.01) H01P 1/15 (2006.01) H01P 5/12 (2006.01)

Patent

CA 1138572

Abstract The planar transmission line attenuator and switch is formed on a semiconductor substrate consisting of a high resistivity semiconductor material and a thin, conductive semiconductor layer. Transmission line metallic conductors are deposited on the conductive semiconductor layer, and at least one of the metallic conductors forms a Schottky barrier contact to the semiconductor substrate. The gap between the metallic conductors defines a shunt current path through the semiconductor layer. By applying a bias voltage to the metallic conductor forming the Schottky barrier contact, the conductivity of the shunt path can be controlled by changing the depletion layer width across the Schottky barrier. A plurality of planar transmission line switches can be combined into multi-port networks, examples of which are cross-bar switching devices and .beta. element switching devices.

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