Planar transmission line comprising a material having...

Details Planar transmission line comprising a material having... Planar transmission line comprising a material having...

H - Electricity

03

F

330/12, 356/69

H03F 3/04 (2006.01) H01P 3/00 (2006.01)

Patent

CA 1069188

ABSTRACT A planar transmission line comprising a Gunn effect semiconductor having an epitaxial portion as the propagating medium amplifies and switches r.f. signals and is not transit time limited in the direction of propagation. The spacing between the transmission line conductors and the dopant concentration of the Gunn effect semiconductor are selected to prevent the formation of domains and thereby prevent Gunn oscillations from occurring at E fields above the Gunn threshold.

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