Plasma amplified photoelectron process endpoint detection...

Details Plasma amplified photoelectron process endpoint detection... Plasma amplified photoelectron process endpoint detection...

H - Electricity

01

J

356/177, 356/192

H01J 37/32 (2006.01)

Patent

CA 1289270

PLASMA AMPLIFIED PHOTOELECTRON PROCESS ENDPOINT DETECTION APPARATUS ABSTRACT OF THE DISCLOSURE A plasma processing apparatus and process endpoint detection method including a plasma chamber for processing an item that has a first portion of a first material and a second portion of a second material, with the first and second materials having different work functions, and a structure for generating a plasma in the plasma chamber. The plasma generating structure including at least a pair of RF-power electrodes with one of them being excited by an RF excitation frequency. The apparatus further includes a structure for generating and ejecting electrons from the second material only when the second material is exposed to the plasma, and a structure for increasing the energies of these generated electrons and accelerating these electrons into the etching plasma with sufficient energy to generate secondary electrons in the plasma. The apparatus further includes a structure for receiving a plasma discharge voltage signal, a structure for filtering the discharge electrical voltage signal to remove the RF excitation frequency and any DC components therein, and a structure for amplifying the natural frequencies of excitation and decay of the plasma discharge voltage perturbation signal, to thereby detect the processing endpoint.

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