Plasma cvd method and apparatus

Details Plasma cvd method and apparatus Plasma cvd method and apparatus

C - Chemistry, Metallurgy

23

C

C23C 16/50 (2006.01) C23C 16/517 (2006.01) H01J 37/32 (2006.01) C23C 16/26 (2006.01) C23C 16/32 (2006.01) C23C 16/34 (2006.01) C23C 16/36 (2006.01) C23C 16/40 (2006.01)

Patent

CA 2205221

The present invention provides a plasma CVD method for forming a plasma from a deposition material gas by application of an electric power, and thereby forming a film on a deposition target object in the plasma, wherein the formation of the plasma from the material gas is performed by applying an RF power and a DC power, and the DC power is applied to an electrode carrying the deposition target object. The present invention also provides a plasma CVD apparatus for forming a plasma from a deposition material gas by applying an electric power from the power applying means, and thereby forming a film on a deposition target object by exposing the deposition target object to the plasma, wherein the power applying means includes RF power applying means and DC power applying means, and the DC power applying means applies an electric power to the electrode carrying the deposition target object.

L'invention concerne un procédé CVD au plasma qui permet de former une pellicule sur un objet par exposition à un plasma d'un gaz brut par le biais d'une énergie haute fréquence (HF) et d'une énergie en courant continu, l'objet étant placé sur une électrode à laquelle est appliquée l'énergie en courant continu. On décrit par ailleurs un appareil à procédé CVD au plasma au moyen duquel une pellicule est formée sur un objet par exposition à un plasma d'un gaz brut, l'opération consistant à appliquer l'énergie électrique d'une double source d'énergie, à savoir une source d'énergie HF et une source d'énergie en courant continu connectée à l'électrode sur laquelle l'objet est disposé.

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