Plasma deposited coatings and low temperature, plasma method...

Details Plasma deposited coatings and low temperature, plasma method... Plasma deposited coatings and low temperature, plasma method...

C - Chemistry, Metallurgy

23

C

204/96.35

C23C 16/50 (2006.01) C23C 16/30 (2006.01) C23C 16/511 (2006.01)

Patent

CA 1325793

Abstract of the Disclosure A method of depositing a substantially hydrogen free or controlled hydrogen content multi-element alloy film on a substrate. The method utilizes a microwave excited plasma of a hydrogen free precursor gas to deposit a hard, adherent coating. The method comprises providing a substrate to be coated in a vacuum deposition chamber, with a source of microwave energy coupled to the vacuum deposition chamber. A substantially hydrogen free reaction gas precursor composition is introduced into the reaction chamber at a pressure corresponding substantially to a pressure minimum of the modified Paschen curve for the reaction gas precursor composition. Activation of the source of microwave energy excites the reaction gas precursor composition, in this way forming a plasma in the vacuum deposition chamber to deposit a substantially hydrogen free or controlled hydrogen content multi-element alloy film on the substrate.

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