Plasma deposition apparatus

Details Plasma deposition apparatus Plasma deposition apparatus

C - Chemistry, Metallurgy

23

C

204/167.2

C23C 16/511 (2006.01) H01J 37/32 (2006.01) H01L 21/00 (2006.01)

Patent

CA 1159012

ABSTRACT OF THE DISCLOSURE A plasma deposition apparatus having a plasma formation chamber and a specimen chamber which are arranged separately. Gaseous material and microwave power are introduced to The plasma formation chamber to generate plasma by a microwave discharge through electron cyclotron resonance. The plasma is extracted to the specimen chamber from the plasma extracting orifice. In the specimen chamber, the plasma is accelerated by the effect of divergent magnetic field to irradiate the surface of the specimen so as to deposit a thin film on the specimen substrate. A high-quality thin film is formed with a high efficiency at a low temperature. Accordingly, a thin film can be deposited on a specimen substrate having a low heat resistivity. The plasma deposition apparatus is useful for manufacturing various kinds of electronic devices.

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