Plasma enhanced chemical vapor deposition apparatus and method

Details Plasma enhanced chemical vapor deposition apparatus and method Plasma enhanced chemical vapor deposition apparatus and method

C - Chemistry, Metallurgy

23

C

C23C 16/54 (2006.01)

Patent

CA 2553122

A substrate processing system includes a deposition chamber (102) and a plurality of tubular electrodes (126) positioned within the deposition chamber (102) defining plasma regions (128) therebetween.

L'invention concerne un système de traitement de substrat qui comprend une chambre de dépôt (102) et plusieurs électrodes tubulaires (126) positionnées dans la chambre de dépôt (102) définissant des zones de plasma (128) entre elles.

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