Plasma enhanced chemical vapor deposition of oxide film stack

Details Plasma enhanced chemical vapor deposition of oxide film stack Plasma enhanced chemical vapor deposition of oxide film stack

C - Chemistry, Metallurgy

23

C

C23C 16/50 (2006.01) C03C 17/34 (2006.01) C23C 16/40 (2006.01) G02F 1/15 (2006.01)

Patent

CA 2072450

ABSTRACT OF THE DISCLOSURE A plasma enhanced chemical vapor deposition method is provided for depositing an oxide film onto a substrate surface. Deposition is achieved even onto a surface of a glass or other relatively non-receptive substrate. A sub-film is deposited under plasma enhanced chemical vapor deposition conditions more strongly favoring deposition, followed by deposition of the desired oxide film under second plasma enhanced chemical vapor deposition conditions less strongly favoring deposition. High quality oxide films can be achieved by deposition at second plasma enhanced chemical vapor. deposition conditions only marginally favoring deposition over etching. -20-

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