C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/42 (2006.01) C23C 14/35 (2006.01) C23C 16/509 (2006.01) H01J 37/34 (2006.01) C23C 14/34 (2006.01)
Patent
CA 2048470
A plasma processing apparatus comprises: a first electrode connectable with a plasma generating power source; a second electrode capable of supporting a substrate to be subjected to a plasma-involving surface treatment; a third electrode enclosing a space between the first and second electrodes, all the electrodes being positioned in an evacuatable chamber; and potential control means for controlling the potential of the third electrode.
Goto Haruhiro H.
Ohmi Tadahiro
Okamura Nobuyuki
Shibata Tadashi
Yamagami Atsushi
Applied Materials Japan Inc.
Canon Kabushiki Kaisha
Ohmi Tadahiro
Ridout & Maybee Llp
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