Plasma processing method and apparatus

H - Electricity – 05 – H

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333/20, 358/25

H05H 1/46 (2006.01) C23C 16/511 (2006.01) C23F 4/00 (2006.01) H01J 27/18 (2006.01) H01J 37/32 (2006.01) H01L 21/302 (2006.01)

Patent

CA 1299773

ABSTRACT OF THE DISCLOSURE In a plasma processing apparatus in which a gas to be activated into a plasma is introduced into a plasma formation chamber through a gas introducing pipe and an input microwave from a microwave source is supplied to the plasma formation chamber, so that the introduced gas is activated into the plasma by electron cyclotron resonance, the input microwave in a TE mode from the microwave source is received by a tapered waveguide in which a dielectric plate is accommodated, so that at least a part of the input microwave is transformed into a microwave in a TM mode having an electric field component in the direction of the propagation of the input microwave, and a microwave in a hybrid mode containing microwaves in both the TE and TM modes are introduced into the plasma formation chamber through a microwave introducing window. As a result that the hybrid wave in the propagation mode having an electric field component or a longitudinal wave component, which is parallel to the direction of the microwave propagation is introduced into the plasma formation chamber, the microwave energy is efficiently supplied to the plasma region which satisfies the ECR conditions and then is absorbed by the plasma, so that the efficiency of the plasma formation is enhanced and accordingly the throughput of the plasma processing is improved. - 1 -

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