Plasma production device and method and rf driver circuit

Details Plasma production device and method and rf driver circuit Plasma production device and method and rf driver circuit

H - Electricity

01

Q

H01Q 1/12 (2006.01) H01J 1/00 (2006.01) H01J 37/32 (2006.01) H01Q 7/00 (2006.01) H01Q 21/20 (2006.01) H05H 1/46 (2006.01)

Patent

CA 2463528

An RF driver circuit and an orthogonal antenna assembly/configuration, are disclosed as part of a method and system for generating high density plasma. The antenna assembly (105, 115, 110, 120) is an orthogonal antenna system that may be driven by any RF generator/circuitry (125, 130) with suitable impedance matching to present a low impedance. The disclosed RF driver circuit uses switching type amplifier elements and presents a low output impedance. The disclosed low-output impedance RF driver circuits eliminate the need for a matching circuit for interfacing with the inherent impedance variations associated with plasma. Also disclosed is the choice for capacitance or an inductance value to provide tuning for the RF plasma source.

La présente invention concerne un ensemble configuré de circuit d'attaque HF et d'antenne orthogonale convenant à un procédé et un système de production de plasma haute densité. L'ensemble antenne (105, 115, 110, 120) est un système d'antenne orthogonale pouvant s'attaquer au moyen d'un générateur HF ou de circuits HF (125, 130) dont l'accord d'impédance permet une faible impédance. Construit à base d'éléments d'amplification à commutation, le circuit d'attaque HF de l'invention offre une faible impédance de sortie. Grâce à de tels circuits d'attaque HF à faible impédance de sortie, on peut se dispenser du circuit d'accord pour accepter les variations affectant, dans le cas du plasma, l'impédance inhérente. L'invention concerne également le choix d'une valeur de capacitance ou d'inductance pour l'accord de la source de plasma HF.

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