Plasma reactor apparatus and method for treating a substrate

Details Plasma reactor apparatus and method for treating a substrate Plasma reactor apparatus and method for treating a substrate

C - Chemistry, Metallurgy

23

C

204/181, 204/96

C23C 16/48 (2006.01) C23C 16/452 (2006.01) C23C 16/50 (2006.01) C23C 16/505 (2006.01) C23C 16/511 (2006.01) H01J 37/32 (2006.01)

Patent

CA 2008926

ABSTRACT OF THE DISCLOSURE An apparatus and method for treating a substrate with an excited species removed from a plasma (15, 15a, 31, 52, 53) is described. The apparatus includes closed or open end tubes (13, 22, 30, 54 and 55) with apparatus or nozzles (16, 32, 56 and 57) for directing the excited species at a substrate (17, 33, 59) and a tunable plate or sliding short (11, 38, 39, 40) internal or external of the tubes for positioning the plasma in the tube during operation of the apparatus. Tuning or nozzle position or power variations are used. The method and apparatus is useful for depositing films, etching and the like.

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