C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
356/178, 204/182
C23C 14/22 (2006.01) C23C 14/00 (2006.01) C23C 14/34 (2006.01) C23C 14/54 (2006.01) C23C 16/44 (2006.01) C23C 16/52 (2006.01) G01N 21/25 (2006.01) H01L 21/363 (2006.01)
Patent
CA 1329166
PLASMA THIN FILM DEPOSITION PROCESS CONTROL Abstract of the Disclosure In a process of depositing a thin film onto a surface of a substrate with the use of a plasma, wherein the plasma optical emission is monitored, analyzed, and the results used to automatically control the nature of the plasma in order to control the characteristics of the deposited thin film. One aspect of the emission that is detected is the intensity of each of two emission lines of different wavelength bands from the same plasma species, the intensities being ratioed and the ratio compared to a predetermined value known to provide a resulting film with uniform and repeatable characteristics. This ratio is also related to the average electron temperature of the plasma, which can be calculated from it. Additionally, the intensity of another emission line from another of the plasma species may be measured and ratioed to one of the foregoing line intensifies if additional control is desired.
571973
Felts John T.
Lopata Eugene S.
Gowling Lafleur Henderson Llp
The Boc Group Inc.
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