Pnpn thyristor

Details Pnpn thyristor Pnpn thyristor

H - Electricity

01

L

345/24

H01L 31/10 (2006.01) G02F 3/02 (2006.01) G11C 11/39 (2006.01) H01L 31/111 (2006.01) H01L 31/12 (2006.01) H01L 31/14 (2006.01) H01S 3/10 (2006.01)

Patent

CA 1271549

ABSTRACT OF THE DISCLOSURE A pnpn thyristor comprises an anode and cathode region, and a base region which is positioned between the anode and cathode regions. The base region is composed of a p-base layer facing the cathode region, and a first to third n-base layers. Among the first to third n-base layers, the first n-base layer faces the p-base layer, and the third n-base layer faces the anode region. The anode and cathode regions are wider in their forbidden bandwidth than the first and third n-base layers, and the second n-base layer is narrower in its forbidden bandwidth than the first and third n- base layers so that an optical coupling property is improved, and a hight output of light is obtained.

554905

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