Polishing slurry for the chemical-mechanical polishing of...

Details Polishing slurry for the chemical-mechanical polishing of... Polishing slurry for the chemical-mechanical polishing of...

C - Chemistry, Metallurgy

09

G

C09G 1/06 (2006.01) C09G 1/02 (2006.01) H01L 21/3105 (2006.01) H01L 21/321 (2006.01)

Patent

CA 2364053

The invention relates to a polishing slurry for the chemical- mechanical polishing of metal and metal/dielectric structures, containing from about 2.5 to about 70% by volume of a silica sol which contains 15 to 40% by weight of SiO2 particles and is stabilized by H+ or K+ ions, wherein the SiO2 particles have a mean particle size of less than 300 nm, from about 6 to about 10% by volume of hydrogen peroxide and a base in a quantity which is appropriate to set the pH (22°C) of the polishing slurry to from about 5 to about 1.5, has a Ta removal rate of > 300 A/min and an improved selectivity.Method for making and using such a slurry.

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