G - Physics – 03 – F
Patent
G - Physics
03
F
402/224
G03F 7/039 (2006.01) C08G 69/26 (2006.01)
Patent
CA 1293088
20731-976 ABSTRACT OF THE DISCLOSURE This invention is that of high temperature polyamides containing the hexafluoroisopropylidene group. A polyamide having the formula: Image where: X is the divalent group: Image a = 0.10 to 0.50 mole fraction b = 0.25 to 0.50 mole fraction c = 0.00 to 0.40 mole fraction d = 0.00 to 0.25 mole fraction; a + b + c + d = 1, said mole fractions being based upon the total moles of X + Y + Z in said polyamide-; n is an integer from 2 to 500; R is independently selected from hydrogen and a substituted or unsubstituted aliphatic or aromatic monovalent group having up to nine carbons; and Y and Z are independently selected from a subtituted or an unsubstituted aliphatic, aromatic or alicyclic divalent group having up to 60 carbons and mixtures thereof. 20731-976 The high temperature polyamides of the invention and photo or radiation sensitizers provide improved high temperature positive resists which can be developed in aqueous alkaline developer and thermally anneal to form heat resistant, polyoxazole relief structures suitable for use in microelectronic and printing applications. The positive photoresists of the invention have improved solubility in coating solvents and improved photospeed. The polyamides of the invention can be prepared by conventional condensation reactions; e.g. the condensation of a diamine and diacid chloride. In addition the polyamides of this invention provide high temperature protective coatings with superior adhesion properties in applications other than the photoresist area.
548343
Hupfer Bernd
Khanna Dinesh N.
Mueller Werner H.
Az Electronic Materials Usa Corp.
Kirby Eades Gale Baker
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