B - Operations – Transporting – 24 – D
Patent
B - Operations, Transporting
24
D
261/6
B24D 3/10 (2006.01) B01J 3/06 (2006.01) B22F 3/26 (2006.01) B24D 3/08 (2006.01) C04B 35/56 (2006.01) C22C 26/00 (2006.01)
Patent
CA 1105497
ABSTRACT OF THE DISCLOSURE A mass of diamond crystals contacting a mass of elemental silicon is confined within a pressure-transmitting medium. The resulting charge assembly is subjected to a pressure of at least 25 kilobars, causing application of isostatic pressure to the contacting masses, which dimensionally stabilizes them and increases the density of the mass of diamond crystals. The resulting pressure-maintained charge assembly is heated to a temperature sufficient to melt the silicon, at which temperature no significant graphitization of the diamond occurs, whereby the silicon is infiltrated through the interstices between the diamond crystals producing, upon cooling, an Adherently-bonded integral body. The resulting body consists of a mass of diamond crystals adherently bonded to each other by a silicon atom-containing bonding medium consisting essentially of silicon carbide and elemental silicon. The diamond crystals range in size from about 1 micron to about 1000 microns. The density of the diamond crystals ranges from about 80% by volume up to about 95% by volume of the body. The bonding medium is distributed substantially uniformly throughout the polycrystalline diamond body. At least about 85% by volume and preferably 100% by volume of the portion of the bonding medium in direct contact with the surfaces of the diamond crystals is silicon carbide. The diamond body is substantially pore-free, and is useful as an abrasive, cutting tool, nozzle or other wear-resistant part.
314623
Devries Robert C.
Lee Minyoung
Szala Lawrence E.
Tuft Roy E.
Company General Electric
Eckersley Raymond A.
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