Polycrystalline or microcrystalline thin film transistor

Details Polycrystalline or microcrystalline thin film transistor Polycrystalline or microcrystalline thin film transistor

H - Electricity

01

L

356/90

H01L 21/84 (2006.01) H01L 21/205 (2006.01) H01L 21/336 (2006.01) H01L 21/86 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1318417

21766-547 ABSTRACT OF THE DISCLOSURE Disclosed is a method of producing a thin film transistor in which the conductivity of source and/or drain is high. The process comprises (1) applying a thin film semi- conductor material comprising silicon onto a non-silicon foundation, for example, a glass or quartz plate such that polycrystalline or microcrystalline material is formed, (2) apply- ing source and/or drain regions of doped semiconductor material onto the film, (3) applying insulating material onto the film, and (4) applying a gate region onto the insulating material, wherein the source and/or drain regions are applied such that the source and/or drain regions have a crystalline structure that is related to the crystalline structure of the thin film. The method can be performed using relatively inexpensive equipments.

600932

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