H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/34 (2006.01) B08B 3/04 (2006.01) B08B 11/00 (2006.01) C01B 33/037 (2006.01) C30B 29/06 (2006.01) C30B 33/00 (2006.01) H01L 21/302 (2006.01) H01L 21/306 (2006.01)
Patent
CA 2247586
Semiconductor material has a low metal concentration at the surface. The semiconductor material has an iron content and/or chromium content on the surface of less than 6.66 x 10-11 g/cm2. A method for producing this semiconductor material includes a preliminary cleaning, a main cleaning and hydrophilization. A device for use in this method has a container with pyramid-shaped recesses at the bottom.
Matériau semiconducteur composé d'une faible concentration métallique en surface. Il s'agit d'une teneur en fer et/ou en chrome qui est inférieure à 6,66 x 10-11 g/cm2. Une méthode de fabrication de ce matériau semiconducteur comprend un prénettoyage, un nettoyage principal ainsi qu'une hydrophilisation. Un dispositif utilisé dans le cadre de cette méthode comprend un récipient présentant au fond des noyures en forme de pyramides.
Bauer Theresia
Dietl Josef
Ott Werner
Pichler Herbert
Schmidbauer Wilhelm
Mcfadden Fincham
Wacker-Chemie Gmbh
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