Polycrystalline silicon based surface passivation films

Details Polycrystalline silicon based surface passivation films Polycrystalline silicon based surface passivation films

H - Electricity

01

L

356/171

H01L 23/31 (2006.01) H01L 21/314 (2006.01)

Patent

CA 1046650

ABSTRACT OF THE DISCLOSURE This is a semiconductor device having a plurality of insulating layers. A first insulating layer arranged on the surface of the semiconductor is a polycrystalline silicon layer containing oxygen. And a second insulating layer which is selected from the group consisting of polycrystalline silicon layer containing nitrogen, Si3N4 layer, Al2O3 layer and silicone resin layer is deposited on the first insulating layer. The second insulating layer has better water-proof characteristic than a SiO2 layer.

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