Polycrystalline silicon resistive device for integrated...

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H01L 27/06 (2006.01) G11C 19/28 (2006.01) H01L 21/20 (2006.01) H01L 21/86 (2006.01) H01L 27/12 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1040321

POLYCRYSTALLINE SILICON RESISTIVE DEVICE FOR INTEGRATED CIRCUITS AND METHOD FOR MAKING SAME Abstract of the Disclosure A resistive device for use as a current feedback loop in an integrated CMOS shift register circuit is made of an island of polycrystalline silicon with a sheet resistivity of from 106 to 108 ohms per square. The polycrystalline silicon island has two contacts thereon fashioned in the manner of MOS source and drain contacts and a dummy polycrystalline silicon insulated gate contact thereon. The device structure is designed to be, and is, fully compatible with CMOS mesa processing. The method for making the device incorporates into the processing steps for CMOS manufacture the formation of polycrystalline silicon islands on the substrate along with monocrystalline silicon islands. In the process, the polycrystalline silicon island is doped with, through source and drain mask openings, impurities of the same conductivity type as that predominating in the polycrystalline silicon island. -1-

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