Polycrystalline silicon semiconductor passivation and masking

Details Polycrystalline silicon semiconductor passivation and masking Polycrystalline silicon semiconductor passivation and masking

H - Electricity

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356/179

H01L 21/22 (2006.01) H01L 21/033 (2006.01) H01L 21/314 (2006.01) H01L 23/29 (2006.01) H01L 29/00 (2006.01)

Patent

CA 1059243

ABSTRACT OF THE DISCLOSURE A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline-silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified. - 1 -

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