Polycrystalline silicon thin film and transistor using the same

Details Polycrystalline silicon thin film and transistor using the same Polycrystalline silicon thin film and transistor using the same

H - Electricity

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356/149

H01L 29/786 (2006.01) H01L 21/205 (2006.01) H01L 21/336 (2006.01) H01L 29/04 (2006.01)

Patent

CA 2024471

ABSTRACT According to the present invention, polycrystal- line silicon thin film with large crystal grain size is formed on a substrate other than single crystal- line silicon, e.g. on a glass substrate with low strain point, by plasma CVD or photo CVD, and the polycrystalline silicon thin film thus obtained has high (100) orientation percentage and low 1220) orientation percentage, low hydrogen content and fluorine content in the film, and large crystal grain size. It has excellent flatness and is suitable for microstructure fabrication and for the manufacture of thin film transistor. Because thin film transistor with large area can be produced, it is also usable for many application such as liquid crystal display. By introducing high con- centration dopant to the interface region between polycrystalline and the substrate, the growth of polycrystalline grain is enhanced as high concentra- tion dopant becomes the nucleus of crystal growth.

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