Polycrystalline thin-film transistor

Details Polycrystalline thin-film transistor Polycrystalline thin-film transistor

H - Electricity

01

L

356/149

H01L 29/04 (2006.01) H01L 29/78 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1195784

-1- Abstract of the Disclosure A polycrystalline thin-film transistor has a polycrystalline silicon layer formed on a substrate. The silicon layer includes at least a pair of electrode regions for causing carriers to range, and an electrode for controlling the carriers. The transistor is characterized in that the length of a region in which the carriers range is at least 10 times greater, and preferably 50 times greater, than the mean grain size substantially in the ranging direction of the carriers, and that the mean grain size is not smaller than 150 nm in at least the region in which the carriers range. Preferably, the ratio between the coefficients of thermal expansion of the substrate and the polycrystalline silicon layer falls within the range of from 0.3 to 3Ø The result is a transistor with improved uniformity of characteristics.

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