Polymeric resist mask composition

Details Polymeric resist mask composition Polymeric resist mask composition

B - Operations, Transporting

05

D

96/175

B05D 3/06 (2006.01) G03F 7/039 (2006.01) H01F 41/34 (2006.01)

Patent

CA 1092410

ABSTRACT OF THE DISCLOSURE A fluorine-containing polymethacrylic ester of the formula Image wherein R1 and R2 are hydrogen, methyl, ethyl, propyl, chloromethyl, or trifluoromethyl; R3 and R4 are hydrogen, methyl or fluorine, and R5 is a fluoroalkyl radical of 1 to 8 carbons, fluorine, or bromine, and n is about 100 to about 20,000, is highly sensitive to electron beams, X-rays, and ultraviolet rays (at low energy density such as 10-7 to 10-6 C/cm2)and is used as a polymeric resist composition on a semiconductor substrate, for example for the manufacture of large scale integrated circuits.

270235

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