Polynorbornene negative photoresist composition

Details Polynorbornene negative photoresist composition Polynorbornene negative photoresist composition

G - Physics

03

F

96/160

G03F 7/012 (2006.01)

Patent

CA 1250174

POLYNORBORNENE NEGATIVE PHOTORESIST ABSTRACT OF THE DISCLOSURE A negative photoresist is formed from a photosensitized ("PS") composition having as an essential component, a homopolymer or copolymer having a major molar amount of a ring-opened unsubstituted tetracyclic norbornene ("NB"), and/or a substituted tetracyclic NB having non-polar substituents, and a minor amount, if any, of another NB, optionally also similarly substituted with non-polar substitutents. The negative photoresist formed by exposure of a film about 1 micron thick of the PS composition to ultraviolet light in the range from about 220-450 nanometers forms, in the contact mode, a pattern of lines and spaces which are developed in a substantially aliphatic hydrocarbon solvent so as to provide a high resolution in the range from about 1 micron to about 2 microns in the pattern. Lines in the pattern have essentially vertical walls and substantially unswollen contours.

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