Polysilane positive photoresist materials and methods for...

Details Polysilane positive photoresist materials and methods for... Polysilane positive photoresist materials and methods for...

C - Chemistry, Metallurgy

08

G

96/216, 402/8

C08G 77/60 (2006.01) G03F 7/075 (2006.01)

Patent

CA 1230444

POLYSILANE POSITIVE PHOTORESIST MATERIALS AND METHODS FOR THEIR USE ABSTRACT OF THE DISCLOSURE New polysilane COPOLYMERS comprise recurring units of -Si(X)(Y)- and Si(A)(B))-, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A and B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct for- mation of a positive image eliminating the heretofore required development step.

476525

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