H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/136
H01L 21/70 (2006.01) H01L 21/033 (2006.01) H01L 21/331 (2006.01) H01L 29/732 (2006.01)
Patent
CA 1153830
A POLYSILICON-BASE SELF-ALIGNED BIPOLAR TRANSISTOR PROCESS AND STRUCTURE Abstract of The Disclosure Disclosed is a process for forming an improved bipolar transistor in a silicon substrate of a first conductivity type, said silicon substrate having a planar surface, a subcollector region of a second conductivity type formed in said substrate, an epi- taxial layer of said second conductivity type formed on said planar surface or said substrate, and first, second and third spaced apart recessed oxide iso- lation regions extending from the planar surface of said epitaxial layer into said substrate, a sub- collector reach-through region positioned between said second and third recessed oxide isolation re- gions, said subcollector reach-through region ex- tending from said planar surface of said epitaxial layer to said subcollector region, said process including the following steps: deposit, using chem- ical vapor deposition techniques, a layer of doped polysilicon on the exposed surface of said substrate said dopant being of said first conductivity type; deposit, using chemical vapor deposition techniques a first layer of silicon dioxide on said polysilicon layer; deposit a layer of photoresist on said first layer of silicon dioxide; utilizing photolitho- graphy, mask off an intended intrinsic base region, said intended intrinsic base region being spaced between said first and second recessed oxide iso- lation regions; utilizing the resist layer as a mask employ reactive ion etching to remove the silicon dioxide and polysilicon superimposed over the in- tended intrinsic base region; ion implant the exposed intrinsic base region with ions of said first con- ductivity type; chemically vapor deposit a rela- tively thick silicon dioxide conformal coating on the FI 9-79-022 exposed surface; reactive ion etch an emitter opening on the epitaxial surface above the implanted intrin- sic base; ion implant the emitter region with ions of said second conductivity type; and utilize a single heat cycle to anneal the ion implantations and drive in the emitter, intrinsic base, extrinsic base and collector reach through. FI 9-79-022
370960
Ho Allen P.
Horng Cheng T.
International Business Machines Corporation
Saunders Raymond H.
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