Polysilicon thin film transistor

Details Polysilicon thin film transistor Polysilicon thin film transistor

H - Electricity

01

L

H01L 21/31 (2006.01) H01L 21/30 (2006.01) H01L 21/336 (2006.01) H01L 29/786 (2006.01) H01L 29/784 (1990.01)

Patent

CA 2100065

2100065 9214268 PCTABS00014 A process for producing a polysilicon thin film transistor includes hydrogenating the thin film transistor and depositing an atomic hydrogen-containing layer on the thin film transistor. The thin film transistor is characterized by leakage current rates as low as 10-13A.

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