C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/325, 148/3.7
C01B 33/02 (2006.01) C01B 33/029 (2006.01) C01B 33/037 (2006.01)
Patent
CA 1340189
The hydrogen content of polysilicon can be reduced by heat treatment. The process is preferably conducted on polysilicon particles in bead-like form produced by chemical vapor deposition in a fluidized bed. The heat treatment is preferably conducted at a temperature of 1000-1200°C. for a time sufficient to reduce the hydrogen content, and insufficient to cause agglomeration of the particles being treated. In order to reduce the tendency of particles to agglomerate at the process temperature employed, the particle bed is preferably maintained in motion during the dehydrogenation. The products produced by the process can have a hydrogen content of 30 ppma or less. These improved products can be used to produce monocrystalline silicon for the production of semiconductor devices.
612125
Allen Robert Hall
Boone James Edward
Albemarle Corporation
Corporation Ethyl
Macrae & Co.
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